Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

High Quality, Reasonable Price, Fast Delivery.

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Home ProductsMosfet Power Module

IXFN38N100Q2 Mosfet Power Module thyristor diode module N-Channel MOSFET

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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IXFN38N100Q2 Mosfet Power Module thyristor diode module N-Channel MOSFET

China IXFN38N100Q2 Mosfet Power Module thyristor diode module N-Channel MOSFET supplier

Large Image :  IXFN38N100Q2 Mosfet Power Module thyristor diode module N-Channel MOSFET

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: IXFN38N100Q2

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 6000pcs
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Detailed Product Description
VDSS: 1000 V VDGR: 1000 V
VGS: ±30 V VGSM: ±40 V
PD: 890 W Weight: 30 G
High Light:

thyristor diode module

,

low voltage power mosfet

 

IXFN38N100Q2

HiPerFETTM Power MOSFET

 

N-Channel Enhancement Mode Avalanche Rated, Low Qg , Low Intrinsic Rg High dV/dt, Low trr

 

VDSS = 1000 V

ID25 = 38 A

RDS(on)= 0.25 Ω

trr ≤ 300 ns

 

IXFN38N100Q2 Mosfet Power Module thyristor diode module N-Channel MOSFET           IXFN38N100Q2 Mosfet Power Module thyristor diode module N-Channel MOSFET

 

Features

• Double metal process for low gate resistance

• miniBLOC, with Aluminium nitride isolation

• Unclamped Inductive Switching (UIS) rated

• Low package inductance

• Fast intrinsic Rectifier

 

Applications

• DC-DC converters

• Switched-mode and resonant-mode power supplies

• DC choppers

• Pulse generators

 

Advantages

• Easy to mount

• Space savings

• High power density

 

Maximum Ratings

Symbol Test Conditions MAX. UNIT
VDSS TJ = 25°C to 150°C 1000 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC = 25°C 38 A
IDM TC = 25°C, pulse width limited by TJM 152 A
IAR TC = 25°C 38 A
EAR TC = 25°C 60 mJ
EAS TC = 25°C 5.0 J
dv/dt

IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

TJ ≤ 150°C, RG = 2 Ω

20 V/ns
PD TC = 25°C 890 W
TJ   -55 ... +150 °C
TJM   150 °C
Tstg   -55 ... +150 °C
VISOL 50/60 Hz, RMS, t = 1 minute 2500 V
Md

Mounting torque

Terminal connection torque

1.5/13

1.5/13

Nm/lb.in.

Nm/lb.in.

 

 

 

 

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Q6040K7 4500 LITTELFUS 15+ TO-3P
STM8324 4500 SAMHOP 16+ SOP8
TDA2050 4500 ST 16+ ZIP

 

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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