Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
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VCES: | 600 V | VGES: | ±20 V |
---|---|---|---|
I C: | 30 A | ICP: | 60 A |
Collector Power Dissipation (Tc = 25°C): | 170 W | ||
High Light: | multi emitter transistor,silicon power transistors |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications
Fast Switching Applications
• The 4th generation
• Enhancement-mode
• Fast switching (FS):
Operating frequency up to 50 kHz (reference)
High speed: tf = 0.05 µs (typ.)
Low switching loss : Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics | Symbol | Rating | Unit |
Collector-emitter voltage | VCES | 600 | V |
Gate-emitter voltage | VGES | ±20 | V |
Collector power dissipation (Tc = 25°C) | PC | 170 | W |
Junction temperature | Tj | 150 | °C |
Storage temperature range | Tstg | −55 to 150 | °C |
Switching time measurement circuit and input/output waveforms
High Power Rectifier Diode 1N4756A , Silicon Planar Zener Diodes
Bridge Type Rectifier Diode 1N4007 50 to 1000 Volts 1.0 Ampere
1N4742A Silicon Planar Zener Diodes for Stabilized Power Supply
Power Programmable IC Chips XC6SLX100-3FGG484C Spartan-6 Family Overview
128K Bytes Sound IC Chip Programming ATMEGA128-16AU 8 Bit Microcontroller
EMC Programmable IC Chips Compliant Slew Rate Limited EI , Timer IC Chip
SMD Power Mosfet Module L7812CV TO-220 Power Trans Electronic Compoents
2SD1594 3 Pin Transistor NEC NPN Power Transistor Switching High Speed
2N5459 Power Mosfet Transistor N-Channel To-92 Original Stock FSC