Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
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Transition Frequency: | 7.5 GHz | Collector-base Capacitance: | 0.4 PF |
---|---|---|---|
Collector-emitter Capacitance: | 0.2 PF | Emitter-base Capacitance: | 0.85 PF |
Junction Ambient: | 450 K/W | Storage Temperature Range: | - 65 To + 150 °C |
High Light: | multi emitter transistor,silicon power transistors |
BFQ67 / BFQ67R / BFQ67W
Silicon NPN Planar RF Transistor
Features
• Small feedback capacitance
• Low noise figure
• High transition frequency
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
Mechanical Data
Typ: BFQ67
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Marking: V2
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFQ67R
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Marking: R67
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFQ67W
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Marking: WV2
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter | Test condition | Symbol | Value | Unit |
Collector-base voltage | VCBO | 20 | V | |
Collector-emitter voltage | VCEO | 10 | V | |
Emitter-base voltage | VEBO | 2.5 | V | |
Collector current | IC | 50 | mA | |
Total power dissipation | Tamb ≤ 60 °C | Ptot | 200 | mW |
Junction temperature | Tj | 150 | °C | |
Storage temperature range | Tstg | - 65 to + 150 | °C |
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
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